Recipient: Yang Feng
Paper Title: Record 2Pr (>38 μC/cm2 at 0.5 V, >28 μC/cm2 at 0.4 V) of 3D MFM Capacitors Enabled by 3 nm HZO and ALD-TiN Orientation Engineering
Authors: Yang Feng1,2*, Xiaolin Wang1*, Yaoyu He2, Leming Jiao1, Jingguang Lu1, Hanjie Li1, Jiawei Xie1, Zhilun Zhang1, Dong Zhang1, Xiaopeng Li2, Wei Shi1, Zijie Zheng1, Chen Sun1, Umesh Chand3, Akhil Ranjan3, Chien Yu-Chieh3, Jixuan Wu2, Jiezhi Chen2 and Xiao Gong1,3
Affiliation: 1ECE, National University of Singapore, Singapore; 2School of Information Science and Engineering, Shandong University, China; 3Institute of Microelectronics (IME), A*STAR; *Equally contributed;


