Wriddhi Chakraborty Posted December 1, 2021 by vlsidev_qn81ur & filed under Technology Papers. Recipient: Wriddhi Chakraborty Paper: BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with Ion = 370 μA/um, SS = 73 mV/dec and Ion/Ioff ratio > 4×109 Authors: W. Chakarborty*, B. Grisafe*, H. Ye*, I. Lightcap*, K. Ni** and S. Datta* Affiliation: *University of Notre Dame and **Rochester Institute of Technology, USA
