2022 IEEE Symposium on VLSI Technology & Circuits
2022 IEEE Symposium on VLSI Technology & Circuits
  • About
  • Program
    • Schedule at a Glance
    • Friday Forum Session
    • Plenary Session
    • Short Courses
    • Workshops
    • Evening Panels
  • Registration
    • Registration
    • Hotel Reservations
    • Onsite Information
    • VLSI OnDemand
  • Authors
    • Presentation Instructions
  • Media
  • Demo Sessions
  • Archive

Rui Zhang

Posted December 1, 2021 by vlsidev_qn81ur & filed under Technology Papers.

Recipient: Rui Zhang

Paper: High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation

Authors: Rui Zhang, Po-Chin Huang, Noriyuki Taoka, Mitsuru Takenaka and Shinichi Takagi

Affiliation: The University of Tokyo

CONTACT INFO

VLSI Secretariat
North America and Europe

VLSI Secretariat
Japan and Far East

CONFERENCE POLICIES

Notifications & Policies

Accessibility

Non-discrimination Policy

IEEE Ethics Reporting

IEEE Privacy Policy

Terms

FAST LINKS

Call for Papers

Call for Workshops

Register

Media

Symposium Archive

Sign up to receive
important notifications




© 2022 Copyright IEEE. All rights reserved. A not-for-profit organization, IEEE is the world’s largest technical professional organization dedicated to advancing technology for the benefit of humanity.