Rui Zhang Posted December 1, 2021 by vlsidev_qn81ur & filed under Technology Papers. Recipient: Rui Zhang Paper: High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation Authors: Rui Zhang, Po-Chin Huang, Noriyuki Taoka, Mitsuru Takenaka and Shinichi Takagi Affiliation: The University of Tokyo
