2022 IEEE Symposium on VLSI Technology and Circuits
2022 IEEE Symposium on VLSI Technology and Circuits
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Rui Zhang

Posted December 1, 2021 by vlsidev_qn81ur & filed under Technology Papers.

Recipient: Rui Zhang

Paper: High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation

Authors: Rui Zhang, Po-Chin Huang, Noriyuki Taoka, Mitsuru Takenaka and Shinichi Takagi

Affiliation: The University of Tokyo

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