Heng Wu Posted December 1, 2021 by vlsidev_qn81ur & filed under Technology Papers. Recipient: Heng Wu Paper: Ge CMOS: Breakthroughs of nFETs ( Imax= 714 mA/mm, gmax= 590 mS/mm) by Recessed Channel and S/D Authors: Heng Wu, Mengwei Si, Lin Dong, Jingyun Zhang, Peide Ye Affiliation: Purdue University
