2026 IEEE/JSAP Symposium on VLSI Technology & Circuits
2026 IEEE/JSAP Symposium on VLSI Technology & Circuits
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Heng Wu

Posted December 1, 2021 by vlsidev_qn81ur & filed under Technology Papers.

Recipient: Heng Wu

Paper: Ge CMOS: Breakthroughs of nFETs ( Imax= 714 mA/mm, gmax= 590 mS/mm) by Recessed Channel and S/D

Authors: Heng Wu, Mengwei Si, Lin Dong, Jingyun Zhang, Peide Ye

Affiliation: Purdue University

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