ChoongHyun Lee Posted December 1, 2021 by vlsidev_qn81ur & filed under Technology Papers. Recipient: ChoongHyun Lee Paper: Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs Authors: ChoongHyun Lee, Cimang Lu, Toshiyuki Tabata, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi Affiliation: The University of Tokyo
