2026 IEEE/JSAP Symposium on VLSI Technology & Circuits
2026 IEEE/JSAP Symposium on VLSI Technology & Circuits
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ChoongHyun Lee

Posted December 1, 2021 by vlsidev_qn81ur & filed under Technology Papers.

Recipient: ChoongHyun Lee

Paper: Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs

Authors: ChoongHyun Lee, Cimang Lu, Toshiyuki Tabata, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi

Affiliation: The University of Tokyo

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