2026 IEEE/JSAP Symposium on VLSI Technology & Circuits
2026 IEEE/JSAP Symposium on VLSI Technology & Circuits
  • About
    • The Symposia
    • Committees
    • Awards
    • Future Symposia
    • Archive
  • Attendee Info
    • Registration
    • Hotel Reservations
    • Onsite Information
    • VLSI Online
    • VLSI OnDemand
  • Call For Papers
    • Overview
    • Late News
    • Paper Preparation
    • Pre-Publish & Publicity
    • Student Info
  • Speaker Info
    • Resource Center
    • Presentation Instructions
    • Creating Video
  • Program
    • Summary
    • Schedule-at-a-Glance
    • Program PDF
    • Satellite Events
  • Media
    • Media Contacts & Guidelines
    • Press Kit
    • News Releases
    • Paper Images & Captions
    • Social Media

ChoongHyun Lee

Posted December 1, 2021 by vlsidev_qn81ur & filed under Technology Papers.

Recipient: ChoongHyun Lee

Paper: Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs

Authors: ChoongHyun Lee, Cimang Lu, Toshiyuki Tabata, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi

Affiliation: The University of Tokyo

CONTACT INFO

VLSI Secretariat
North America and Europe

VLSI Secretariat
Japan and Far East

For VLSI 2026, the North America and Europe Secretariat is primarily responsible for overall symposium operations, including registration, paper submission, and program.

CONFERENCE POLICIES

Notifications & Policies

Accessibility

Non-discrimination Policy

IEEE Ethics Reporting

IEEE Privacy Policy

Terms

FAST LINKS

Call for Papers

Call for Workshops

Register

Media

Symposium Archive

Sign up to receive
important notifications

© 2026 Copyright IEEE. All rights reserved. A not-for-profit organization, IEEE is the world’s largest technical professional organization dedicated to advancing technology for the benefit of humanity.