Kaizhen Han Posted January 11, 2024 by Melissa Sanders & filed under Technology Papers. Recipient: Kaizhen Han Paper: First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300μA/μm Authors: K. Han, Q. Kong, Y. Kang, C. Sun, C. Wang, J. Zhang, H. Xu, S.Samanta, J. Zhou, H. Wang, V.-Y. Thean and X. Gong Affiliation: National University of Singapore (NUS), Singapore
