Former Best Student Paper Award Winners

Paper:  First Demonstration of Ge₂Sb₂Te₅-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA/cm^­2) and Low Resistance Drift (~0.002 at 105°C)

Authors:A. I. Khan,  C. Perez, X. Wu,  B. Won*,  K. Kim**, H. Kwon, P. Ramesh,  K. Neilson,  M. Asheghi, K. Saraswat,  Z. Lee**, I-K Oh*, H-S P. Wong,  K. Goodson, E. Pop

Affiliation:   Stanford University, *Ajou University, **Ulsan National Institute of Science and Technology

Recipient: Wriddhi Chakraborty

Paper: BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with I_on = 370 μA/um, SS = 73 mV/dec and I_on/I_off ratio > 4x10⁹

Authors: W. Chakarborty*, B. Grisafe*, H. Ye*, I. Lightcap*, K. Ni** and S. Datta*

Affiliation: *University of Notre Dame and **Rochester Institute of Technology, USA

Recipient: Stefano Bianchi

Paper: Energy-Efficient Continual Learning in Hybrid Supervised-Unsupervised Neural Networks with PCM Synapses

Authors: S. Bianchi*, I. Muñoz-Martin*, G. Pedretti*, O. Melnic*, S. Ambrogio** and D. Ielmini*

Affiliation: *Politecnico di Milano, Italy and **IBM Research, USA

Recipient: Naga Sruti Avasarala

Paper: Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

Authors: N. Avasarala, G.L. Donadio, T. Witters, K. Opsomer, B. Govoreanu, A. Fantini, S. Clima, H. Oh, S. Kundu, W. Devulder, M.H. van der Veen, J. Van Houdt, M. Heyns, L. Goux and G. S. Kar

Affiliation: imec and KU Leuven, Belgium

Recipient: Dian Lei

Paper:The First GeSn FinFET on a Novel GeSnOI Substrate Achieving Lowest S of 79 mV/decade and Record High G_m,int of 807 μS/μm for GeSn P-FETs

Authors: Dian Lei¹, Kwang Hong Lee², Shuyu Bao^2,3, Wei Wang1, Saeid Masudy-Panah¹, Sachin Yadav¹, Annie Kumar¹, Yuan Dong¹, Yuye Kang¹, Shengqiang Xu¹, Ying Wu¹, Yi-Chiau Huang⁴, Hua Chung⁴, Schubert S. Chu⁴, Satheesh Kuppurao⁴, Chuan Seng Tan^2,3, Xiao Gong¹ and Yee-Chia Yeo¹

Affiliation: ¹National University of Singapore, ²Singapore MIT Alliance for Research and Technology, ³Nanyang Technological University, ⁴Applied Materials

Recipient: Lukas Czornomaz

Paper: First Demonstration of InGaAs/SiGe CMOS Inverters and Dense SRAM Arrays on Si Using Selective Epitaxy and Standard FEOL Processes

Authors: L. Czornomaz, V. Djara, V. Deshpande, E. O’Connor, M. Sousa, D. Caimi, K. Cheng*, J. Fompeyrine

Affiliation: IBM Research GmbH Zürich Laboratory, *IBM Research

Recipient: Cimang Lu

Paper:Design and Demonstration of Reliability-Aware Ge Gate Stacks with 0.5 nm EOT

Authors: Cimang Lu, Choong Hyun Lee, Tomonori Nishimura and Akira Toriumi

Affiliation:The University of Tokyo, JST-CREST

Recipient: Heng Wu

Paper: Ge CMOS: Breakthroughs of nFETs ( Imax= 714 mA/mm, gmax= 590 mS/mm) by Recessed Channel and S/D

Authors: Heng Wu, Mengwei Si, Lin Dong, Jingyun Zhang, Peide Ye

Affiliation: Purdue University

Recipient: ChoongHyun Lee

Paper: Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs

Authors: ChoongHyun Lee, Cimang Lu, Toshiyuki Tabata, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi

Affiliation: The University of Tokyo

Recipient: Rui Zhang

Paper: High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO₂/Al₂O₃/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation

Authors: Rui Zhang, Po-Chin Huang, Noriyuki Taoka, Mitsuru Takenaka and Shinichi Takagi

Affiliation: The University of Tokyo

Recipient: Jiale Liang

Paper: A 1.4μA Reset Current Phase Change Memory Cell with Integrated Carbon Nanotube Electrodes for Cross-Point Memory Application

Authors: Jiale Liang, Rakesh Gnana David Jeyasingh, Hong-Yu Chen, and H. -S. Philip Wong

Affiliation: Stanford University

Recipient: Laurent Brunet

Paper: New Insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology

Authors: Laurent. Brunet*+, X. Garros, M. Cassé, O. Weber, F. Andrieu, C. Fenouillet-Béranger, P. Perreau, F. Martin, M. Charbonnier, D. Lafond, C. Gaumer*, S. Lhostis*, V. Vidal, L. Brévard, L. Tosti, S. Denorme*, S. Barnola, J.F. Damlencourt, V. Loup, G. Reimbold, F. Boulanger, O. Faynot, A. Bravaix

Affiliation: ¹CEA-LETI, * STMicroelectronics, +IM2NP

Recipient: Gregory Bidal

Paper: High velocity Si-nanodot: a candidate for SRAM applications at 16nm node and below

Authors: Gregory Bidal^1,2, Frederic Boeuf¹, Stephane Denorme¹, Nicolas Loubet¹, Jean Luc Huguenin^1,2, Pierre Perreau³, Dominique Fleury^1,2, François Leverd¹, Sebastien Lagrasta¹, Sebastien Barnola³, Thierry Salvetat³, Bastien Orlando¹, Remi Beneyton¹, Laurent Clement¹, Roland Pantel¹, Stephane Monfray¹, Gerard Ghibaudo² and Thomas Skotnicki¹

Affiliation: ¹STMicroelectronics, ²IMEP, Minatec INPG,³CEA-LETI/Minatec

Recipient: Nishant Patil and Albert Lin

Paper: Integrated Wafer-Scale Growth and Transfer of Directional Carbon Nanotubes and Misaligned-Carbon-Nanotube-Immune Logic Structures

Authors: Nishant Patil, Albert Lin, Edward R. Myers, H.-S. Philip Wong, and Subhasish Mitra
Affiliation: Stanford University

Recipient: Mohan V. Dunga

Paper: BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design

Authors: Mohan V. Dunga¹, Chung-Hsun Lin¹, Darsen D. Lu¹, Weize Xiong², C. R. Cleavelin², P. Patruno³, Jiunn-Ren Hwang⁴, Fu-Liang Yang⁴, Ali M. Niknejad¹ and Chenming Hu¹

Affiliation: ¹University of California, Berkeley, ²Texas Instruments Inc., ³SOITECH, ⁴Taiwan Semiconductor Manufacturing Company (TSMC)

Recipient: Hyunjin Lee

Paper: Sub-5nm All-Around Gate FinFET for Ultimate Scaling

Authors: Hyunjin Lee, Lee-Eun Yu, Seong-Wan Ryu, Jin-Woo Han, Kanghoon Jeon, Dong-Yoon Jang, Kuk-Hwan Kim, Jiye Lee, Ju-Hyun Kim, Sang Cheol Jeon*, Gi Seong Lee*, Jae Sub Oh*, Yun Chang Park*, Woo Ho Bae*, Hee Mok Lee*, Jun Mo Yang*, Jung Jae Yoo*, Sang Ik Kim* and Yang-Kyu Choi

Affiliation: Korea Advanced Institute of Science and Technology, *Korean National Nanofab Center

Recipient: Chien-Tai Chan

Paper: Investigation of Post-NBTI Stress Recovery in pMOSFETs by Direct Measurement of Single Oxide Charge De-Trapping

Authors: Chien-Tai Chan, Huan-Chi Ma, Chun-Jung Tang and Tahui Wang

Affiliation: National Chiao-Tung University

Recipient: Sunjung Kim

Paper: Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs

Authors: Sunjung Kim¹, Byung Jin Cho¹, Ming-Fu li^1,2, Shi-Jin Ding¹, Ming Bin Yu², Chunxiang Zhu¹, Albert Chin³, and Dim-Lee Kwong⁴

Affiliation: ¹National University of Singapore, ²Institute of Microelectronics (IME), Singapore, ³National Chiao Tung University, ⁴University of Texas, Austin

Paper:  An 81.6dB SNDR 15.625MHz BW 3rd Order CT SDM with a True TI NS Quantizer

Authors: S. Lee, T. Kang, S. Song, K. Kwon, M. Flynn

Affiliation:        University of Michigan

Paper: CHIMERA: A 0.92 TOPS, 2.2 TOPS/W Edge AI Accelerator with 2 MByte On-Chip Foundry Resistive RAM for Efficient Training and Inference

Authors: M. Giordano^1,3, K. Prabhu^1,3, K. Koul^1,3, R. M. Radway^1,3, A. Gural^1,3, R. Doshi^1,3, Z. F. Khan¹, J. W. Kustin¹, T. Liu¹, G. B. Lopes¹, V. Turbiner¹, W.-S. Khwa², Y.-D. Chih², M.-F. Chang², G. Lallement^1,3, B. Murmann¹, S. Mitra¹ and P. Raina¹

Affiliation:¹Stanford University, CA, USA; ²TSMC, Hsinchu, Taiwan; ³Equal Contribution

Recipient: Efraïm Eland

Paper: A 440μW, 109.8dB DR, 106.5dB SNDR Discrete-Time Zoom ADC with a 20kHz BW

Authors: Efraïm Eland*, Shoubhik Karmakar*, Burak Gönen***, Robert van Veldhoven** and Kofi Makinwa*

Affiliation: *Delft University of Technology, **NXP Semiconductors and ***Ethernovia, the Netherlands

Recipient: Umidjon Nurmetov

Paper: A CMOS Temperature Stabilized 2-Dimensional Mechanical Stress Sensor with 11-bit Resolution

Authors: U. Nurmetov*, T. Fritz**, E. Muellner**, C. Dougherty**, F. Kreupl* and R. Brederlow**

Affiliation: *Technical Univ. of Munich and **Texas Instruments Freising, Germany

Recipient: Amr Suleiman

Paper: Navion: A Fully Integrated Energy-Efficient Visual-Inertial Odometry Accelerator for Autonomous Navigation of Nano Drones

Authors: Amr Suleiman, Zhengdong Zhang, Luca Carlone, Sertac Karaman and Vivienne Sze

Affiliation: Massachusetts Institute of Technology, USA

Recipient: Yeunhee Huh

Paper: A 10.1” 56-Channel, 183 uW/electrode, 0.73 mm2/sensor High SNR 3D Hover Sensor Based on Enhanced Signal Refining and Fine Error Calibrating Techniques

Authors: Yeunhee Huh¹, Sung-Wan Hong², Sang-Hui Park¹, Jun-Suk Bang¹, Changbyung Park² Sungsoo Park², Hui-Dong Gwon¹, Se-Un Shin¹, Hongsuk Shin¹, Sung-Won Choi¹, Yong-Min Ju¹, Ji-Hun Lee¹, Gyu-Hyeong Cho¹

Affiliation: ¹KAIST, ²Samsung Electronics Co., Ltd.

Recipient: Bahman Yousefzadeh

Paper: A BJT-based Temperature-to-Digital Converter With ±60 mK (3 σ) Inaccuracy From −55 °C to +125 °C in 0.16-μm CMOS

Authors: Bahman Yousefzadeh, Saleh Heidary Shalmany, Kofi A. A. Makinwa

Affiliation: Delft University of Technology

Recipient: Abishek Manian

Paper: A 40-Gb/s 9.2-mW CMOS Equalizer

Authors: A. Manian and B. Razavi

Affiliation: University of California, Los Angeles

Recipient: Maryam Tabesh

Paper: A Power-Harvesting Pad-Less mm-Sized 24/60GHz Passive Radio with On-Chip Antennas

Authors: Maryam Tabesh, Mustafa Rangwala*, Ali M. Niknejad and Amin Arbabian*

Affiliation: University of California, Berkeley and *Stanford University

Recipient: Yingzhe Hu

Paper: A Fully Self-Powered Hybrid System Based on CMOS ICs and Large-Area Electronics for Large-Scale Strain Monitoring

Authors:Yingzhe Hu, Liechao Huang, Josue Sanz Robinson, Warren Rieutort-Louis, Sigurd Wanger, James C. Sturm, Naveen Verma

Affiliation: Princeton University, USA

Recipient: Jun Won Jung

Paper: A 25-Gb/s 5-mW CMOS CDR/Deserializer

Authors: Jun Won Jung and Behzad Razavi

Affiliation: University of California, Los Angeles, CA, USA

Recipient: Chintan Thakkar

Paper: A 10Gb/s 45mW Adaptive 60GHz Baseband in 65nm CMOS

Authors: Chintan Thakkar¹, Lingkai Kong¹, Kwangmo Jung¹, Antoine Frappé², and Elad Alon¹

Affiliation: ¹University of California, Berkeley, USA & ²Institut Supérieur de l’Electronique et du Numérique, France

Recipient: Dajiang Zhou

Paper: A 530Mpixels/s 4096×2160@60fps H.264/AVC High Profile Video Decoder Chip

Authors: Dajiang Zhou¹, Jinjia Zhou¹, Xun He¹, Ji Kong², Jiayi Zhu², Peilin Liu², and Satoshi Goto¹

Affiliation: ¹Waseda University, Japan & ²Shanghai Jiao Tong University, China

Recipient: Zhengya Zhang

Paper: A 47 Gb/s LDPC Decoder with Improved Low Error Rate Performance

Authors: Zhengya Zhang, Venkat Anantharam, Martin J. Wainwright, Borivoje Nikolic

Affiliation: University of California, Berkeley, USA

Recipient: Jason Hu

Paper: A 9.4-bit, 50-MS/s, 1.44-mW Pipelined ADC using Dynamic Residue Amplification

Authors: Jason Hu, Noam Dolev and Boris Murmann

Affiliation: Stanford University, USA

Recipient: Minjae Lee

Paper: A 9b, 1.25ps Resolution Coarse-Fine Time-to- Digital Converter in 90nm CMOS that Amplifies a Time Residue

Authors: Minjae Lee and Asad A. Abidi

Affiliation: University of California, Los Angeles, USA

Recipient: Koon-Lun Jackie Wong

Paper: A 5-mW 6-Gb/s Quarter-Rate Sampling receiver with a 2-Tap DFE Using Soft Decisions

Authors: Koon-Lun Jackie Wong¹, Alexander Rylyakov², and Chih-Kong Ken Yang¹

Affiliation: ¹University of California, Los Angeles, USA &²IBM T. J. Watson Research Center, USA

Recipient: Antonio Liscidini

Paper: A 0.13 um CMOS Front-End for DCS1800/UMTS/ 802.11b-g with Multi-band Positive Feedback Low Noise Amplifier

Authors: Antonio Liscidini, Massimo Brandolini, Davide Sanzogni, and Rinaldo Castello

Affiliation: University of Pavia, Italy

Recipient: Timothy O. Dickson

Paper: A 2.5-V, 40-Gb/s Decision Circuit Using SiGe BiCMOS Logic

Authors: Timothy O. Dickson¹, Rudy Beerkens², and Sorin P. Voinigescu¹

Affiliation: ¹University of Toronto, Canada &²STMicroelectonics, Canada