Dian Lei

Recipient: Dian Lei

Paper:The First GeSn FinFET on a Novel GeSnOI Substrate Achieving Lowest S of 79 mV/decade and Record High G_m,int of 807 μS/μm for GeSn P-FETs

Authors: Dian Lei¹, Kwang Hong Lee², Shuyu Bao^2,3, Wei Wang1, Saeid Masudy-Panah¹, Sachin Yadav¹, Annie Kumar¹, Yuan Dong¹, Yuye Kang¹, Shengqiang Xu¹, Ying Wu¹, Yi-Chiau Huang⁴, Hua Chung⁴, Schubert S. Chu⁴, Satheesh Kuppurao⁴, Chuan Seng Tan^2,3, Xiao Gong¹ and Yee-Chia Yeo¹

Affiliation: ¹National University of Singapore, ²Singapore MIT Alliance for Research and Technology, ³Nanyang Technological University, ⁴Applied Materials