Asir Intisar Khan

Paper:  First Demonstration of Ge₂Sb₂Te₅-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA/cm^­2) and Low Resistance Drift (~0.002 at 105°C)

Authors:A. I. Khan,  C. Perez, X. Wu,  B. Won*,  K. Kim**, H. Kwon, P. Ramesh,  K. Neilson,  M. Asheghi, K. Saraswat,  Z. Lee**, I-K Oh*, H-S P. Wong,  K. Goodson, E. Pop

Affiliation:   Stanford University, *Ajou University, **Ulsan National Institute of Science and Technology